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BYV40E-200 Datasheet

  • BYV40E-200

  • Rectifier diodes ultrafast, rugged

  • 48.17KB

  • 6頁

  • PHILIPS

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Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
鈥?Low forward volt drop
鈥?Fast switching
鈥?Soft recovery characteristic
鈥?Reverse surge capability
鈥?High thermal cycling performance
鈥?low profile surface mounting
package
BYV40E series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
鈮?/div>
0.7 V
I
O(AV)
= 1.5 A
I
RRM
= 0.1 A
t
rr
鈮?/div>
25 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV40E series is supplied in
the SOT223 surface mounting
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV40E
T
sp
鈮?/div>
120藲C
-
-
-
-
-
-
-
MIN.
-150
150
150
150
1.5
1.5
6
6.6
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
I
RRM
I
RSM
T
stg
T
j
square wave;
未
= 0.5;
T
sp
鈮?/div>
132藲C
t = 25
碌s; 未
= 0.5;
T
sp
鈮?/div>
132 藲C
t
p
= 10 ms
t
p
= 8.3 ms
sinusoidal; T
j
= 150藲C prior
to surge; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode
Storage temperature
Operating junction temperature
-
-
-65
-
0.1
0.1
150
150
A
A
藲C
藲C
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300

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