Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic envelope featuring low
forward voltage drop, absence of
stored charge. and guaranteed
reverse surge capability. The devices
are intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
BYV133F series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
BYV133F-
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
MAX.
35
35
0.60
20
MAX.
40
40
0.60
20
MAX.
45
45
0.60
20
UNIT
V
V
A
PINNING - SOT186
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1 2 3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-35
35
35
35
MAX.
-40
40
40
40
20
20
20
100
110
-45
45
45
45
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
hs
鈮?/div>
112 藲C
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
square wave;
未
= 0.5;
T
hs
鈮?/div>
61 藲C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
碌s; 未
= 0.5;
T
hs
鈮?/div>
61 藲C
t = 10 ms
t = 8.3 ms
sinusoidal T
j
= 125 藲C prior
to surge; with reapplied
V
RRM(max)
2
I t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode.
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode.
Storage temperature
Operating junction temperature
-
-
-
-65
-
50
1
1
175
150
A
2
s
A
A
藲C
藲C
August 1996
1
Rev 1.100
1
2
3
4
5
