BYT62
Vishay Telefunken
Silicon Mesa Rectifier
Features
D
D
D
D
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristic
Low reverse current
Applications
High voltage rectifier
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction temperature
Storage temperature range
T
j
= 25
_
C
Parameter
Junction ambient
T
j
= 25
_
C
Parameter
Forward voltage
g
Test Conditions
I
F
=200mA
I
F
=1A
I
F
=1A, T
j
=175
擄
C
I
F
=1A, T
j
=鈥?0
擄
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=175
擄
C
V
R
=V
RRM
, T
j
=鈥?0
擄
C
I
R
=100
m
A
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
V
(BR)R
t
rr
Min
Typ
Max
3.0
3.6
2.9
4.0
5
250
400
5
Unit
V
V
V
V
m
A
m
A
nA
V
m
s
Test Conditions
l=10mm, T
L
=constant
Symbol
R
thJA
Value
60
Unit
K/W
Test Conditions
Type
Symbol
V
R
=V
RRM
I
FSM
I
FAV
E
R
T
j
T
stg
Value
2400
10
350
60
175
鈥?5...+190
Unit
V
A
mA
mJ
t
p
=10ms, half sinewave
T
amb
=25
擄
C, R
thJA
60K/W
I
(BR)R
=1A, inductive load
x
擄
C
擄
C
Maximum Thermal Resistance
Electrical Characteristics
Reverse current
Reverse breakdown voltage
Reverse recovery time
2500
Document Number 86033
Rev. 2, 24-Jun-98
www.vishay.de
鈥?/div>
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