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BYQ30ED-200 Datasheet

  • BYQ30ED-200

  • Rectifier diodes ultrafast, rugged

  • 66.60KB

  • 8頁(yè)

  • PHILIPS

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Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
鈥?Low forward volt drop
鈥?Fast switching
鈥?Soft recovery characteristic
鈥?Reverse surge capability
鈥?High thermal cycling performance
鈥?Low thermal resistance
BYQ30E, BYQ30EB, BYQ30ED series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
鈮?/div>
0.95 V
I
O(AV)
= 16 A
I
RRM
= 0.2 A
t
rr
鈮?/div>
25 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ30E series is supplied in the SOT78 conventional leaded package.
The BYQ30EB series is supplied in the SOT404 surface mounting package.
The BYQ30ED series is supplied in the SOT428 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
1
anode 2
cathode
SOT78 (TO220AB)
tab
SOT404
tab
SOT428
tab
2
1 23
2
1
3
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
j
T
stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Peak non-repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
square wave;
未
= 0.5; T
mb
鈮?/div>
104 藲C
square wave;
未
= 0.5; T
mb
鈮?/div>
104 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
碌s; 未
= 0.001
t
p
= 100
碌s
CONDITIONS
BYQ30E/ BYQ30EB/ BYQ30ED
-
-
-
-
-
-
-
-
-
-
- 40
MIN.
-150
150
150
150
16
16
80
88
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
藲C
藲C
1.
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
October 1998
1
Rev 1.200

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