BYG21
Vishay Telefunken
Fast Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
D
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
15 811
Applications
Surface mounting
Fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG21K
BYG21M
Symbol
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
擄
C
E
R
Value
800
1000
30
1.5
鈥?5...+150
20
Unit
V
V
A
A
擄
C
mJ
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy鈥揼lass hard tissue
mounted on epoxy鈥揼lass hard tissue, 50mm
2
35
m
m Cu
mounted on Al鈥搊xid鈥揷eramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86010
Rev. 3, 24-Jun-98
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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