BYG10
Vishay Telefunken
Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Wave and reflow solderable
15 811
Applications
Surface mounting
General purpose rectifier
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
擄
C
E
R
Value
200
400
600
800
1000
30
1.5
鈥?5...+150
20
Unit
V
V
V
V
V
A
A
擄
C
mJ
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy鈥揼lass hard tissue
mounted on epoxy鈥揼lass hard tissue, 50mm
2
35
m
m Cu
mounted on Al鈥搊xid鈥揷eramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86008
Rev. 3, 24-Jun-98
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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