Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
FEATURES
鈥?Extremely fast switching
鈥?Low reverse recovery current
鈥?Low thermal resistance
鈥?Reduces switching losses in
associated MOSFET
BYC8B-600
SYMBOL
QUICK REFERENCE DATA
V
R
= 600 V
V
F
鈮?/div>
1.85 V
I
F(AV)
= 8 A
t
rr
= 19 ns (typ)
k
tab
a
3
APPLICATIONS
鈥?Active power factor correction
鈥?Half-bridge lighting ballasts
鈥?Half-bridge/ full-bridge switched
mode power supplies.
The BYC8B-600 is supplied in the
SOT404 surface mounting
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
no connection
cathode
1
anode
SOT404
tab
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
CONDITIONS
MIN.
-
-
-
-
-
-
-
-40
-
MAX.
600
600
500
8
16
55
60
150
150
UNIT
V
V
V
A
A
A
A
藲C
藲C
T
stg
T
j
T
mb
鈮?/div>
110 藲C
未
= 0.5; with reapplied V
RRM(max)
;
T
mb
鈮?/div>
82 藲C
1
Repetitive peak forward current
未
= 0.5; with reapplied V
RRM(max)
;
T
mb
鈮?/div>
82 藲C
1
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; T
j
= 150藲C prior to surge
with reapplied V
RWM(max)
Storage temperature
Operating junction temperature
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
minimum footprint, FR4 board
-
TYP.
-
50
MAX.
2.2
-
UNIT
K/W
K/W
1
it is not possible to make connection to pin 2 of the SOT404 package
October 1998
1
Rev 1.200
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