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BUX85 Datasheet

  • BUX85

  • SITCHMODE NPN Silicon Power Transistors

  • 119.16KB

  • 4頁

  • ONSEMI

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SPECIFICATIONS FEATURES:
鈥?/div>
VCEO(sus) 450 V
鈥?/div>
VCES(sus) 1000 V
鈥?/div>
Fall time = 0.3
碌s
(typ) at IC = 1.0 A
鈥?/div>
VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
The BUX85 is designed for high voltage, high speed power switching applications
like converters, inverters, switching regulators, motor control systems.
SWITCHMODE is a trademark of Motorola, Inc.
SWITCHMODE
NPN Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Maximum Lead Temperature for Soldering Purpose:
1/8鈥?from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Reverse Base Current 鈥?Peak
Base Current
鈥?Continuous
鈥?Peak (1)
Collector Current
鈥?Continuous
鈥?Peak (1)
Emitter Base Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
x
10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VEBO
VCES
R
胃JC
R
胃JA
IC
ICM
IBM
IB
IBM
PD
TL
BUX84
800
400
鈥?65 to + 150
62.5
Max
0.75
1.0
50
400
275
2.5
2
3.0
1
5
2 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS
50 WATTS
BUX85
BUX85
1000
450
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BUX85/D
Watts
mW/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
_
C
_
C
1

BUX85 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 2A

  • 450V

  • 1V @ 200mA，1A

  • 200µA

  • 30 @ 100mA，5V

  • 50W

  • 4MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • BUX85OS

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