廬
BUV46
BUV46A
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTORS
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
FAST SWITCHING SPEED
3
1
2
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
SWITCH MODE POWER SUPPLIES
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The devices are silicon Multiepitaxial Mesa NPN
transistors in the Jedec TO-220 plastic package
intended for high voltage, fast switching
applications.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEX
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Parameter
BUV46
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (V
BE
= -2.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at Tc = 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
BUV46A
1000
1000
450
7
5
3
70
-65 to 150
150
850
850
400
Unit
V
V
V
V
A
A
W
o
o
C
C
January 1999
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