BUT12/12A
BUT12/12A
High Voltage Power Switching Applications
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BUT12
: BUT12A
V
CEO
Collector-Emitter Voltage
: BUT12
: BUT12A
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
850
1000
400
450
8
20
4
100
150
- 65 ~ 175
V
V
V
V
A
A
A
W
擄C
擄C
Parameter
Value
Units
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
I
CES
I
EBO
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 100mA, L = 25mH
V
CE
= V
CES
, V
BE
= 0
V
BE
= 9V, I
C
= 0
I
C
= 6A, I
B
= 1.2A
I
C
= 6A, I
B
= 1.2A
V
CC
= 250V, I
C
= 6A
I
B1
= - I
B2
= 1.2A
R
L
= 41.6鈩?/div>
Min.
400
Typ.
Max.
1
10
1.5
1.5
1
4
0.8
Units
V
mA
mA
V
V
碌s
碌s
碌s
* Pulsed Test: PW = 300碌s, duty cycle = 1.5%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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2
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