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BULD50SL Datasheet

  • BULD50SL

  • NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

  • 10頁

  • POINN

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BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright 漏 1997, Power Innovations Limited, UK
FEBRUARY 1994 - REVISED SEPTEMBER 1997
q
Designed Specifically for High Frequency
Electronic Ballasts
Integrated Fast t
rr
Anti-Parallel Diode,
Enhancing Reliability
Diode t
rr
Typically 1 碌s
New Low-Height SL Power Package,
TO220 Pin-Compatible
Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and
Diode
Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
B
C
E
B
C
E
TO-220 PACKAGE
(TOP VIEW)
q
1
2
3
q
q
Pin 2 is in electrical contact with the mounting base.
q
q
MDTRACA
SL PACKAGE
(TOP VIEW)
1
2
3
q
q
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB鈥檚). This range of
switching transistors has tightly controlled
storage times and an integrated fast t
rr
anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
device symbol
C
B
E
absolute maximum ratings at 25擄C
婁
(unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
NOTES: 1. This value applies for t
p
=
1 s.
2. This value applies for t
p
=
10 ms, duty cycle
鈮?/div>
2%.
婁
鈮?/div>
25擄C case temperature for BULD50KC, and
鈮?/div>
25擄C ambient temperature for BULD50SL
BULD50KC
BULD50SL (see Note 1)
BULD50KC
BULD50SL (see Note 1)
SYMBOL
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
VALUE
600
600
400
9
3.5
6
1.5
2.5
UNIT
V
V
V
V
A
A
A
A
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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