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BULB128D-1 Datasheet

  • BULB128D-1

  • HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
BULB128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Ordering Code
BULB128D-1
s
Marking
BULB128D
Shipment
Tube
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
12
I
2
PAK
(TO-262)
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= 2 A, t
p
< 10碌s, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
700
400
V
(BR)EBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
1/7
September 2003

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