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廬

BUL903ED

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

s

s

s

s

s

s

INTEGRATED ANTISATURATION AND

PROTECTION NETWORK

INTEGRATED ANTIPARALLEL COLLECTOR

EMITTER DIODE

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

VERY HIGH SWITCHING SPEED

ARCING TEST SELF PROTECTED

TO-220

1

2

3

APPLICATIONS

s

LAMP ELECTRONIC BALLAST FOR

FLUORESCENT LIGHTING USING 277V

HALF BRIDGE CURRENT-FED

CONFIGURATION

DESCRIPTION

The BUL903ED is manufactured using high

voltage Multi Epitaxial Planar technology for high

switching speeds and high voltage capability.

The device has been designed in order to

operate without baker clamp and transil

protection. This enables saving from 2 up to 10

components in the application.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

CES

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

P

t ot

T

stg

T

j

Parameter

Collector-Emitter Voltage (V

BE

= 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (t

p

<5 ms)

Base Current

Base Peak Current (t

p

<5 ms)

Total Dissipation at T c = 25 C

Storage Temperature

Max. O perating Junction Temperature

o

Value

900

400

7

5

8

2

4

70

-65 to 150

150

Uni t

V

V

V

A

A

A

A

W

o

o

C

C

June 1998

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