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BUL45D2 Datasheet

  • BUL45D2

  • POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

  • 12頁

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45D2/D
BUL45D2
Designer's
鈩?/div>
Data Sheet
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
The BUL45D2 is state鈥搊f鈥揳rt High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (鹵150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
鈥?/div>
Low Base Drive Requirement
鈥?/div>
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
鈥?/div>
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
鈥?/div>
Integrated Collector鈥揈mitter Free Wheeling Diode
鈥?/div>
Fully Characterized and Guaranteed Dynamic VCE(sat)
鈥?/div>
鈥? Sigma鈥?Process Providing Tight and Reproductible Parameter Spreads
It鈥檚 characteristics make it also suitable for PFC application.
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
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CASE 221A鈥?6
TO鈥?20AB
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VCES
Value
400
700
700
12
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Sustaining Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Voltage
VEBO
IC
ICM
IB
IBM
PD
Collector Current 鈥?Continuous
鈥?Peak (1)
Base Current 鈥?Continuous
Base Current
鈥?Peak (1)
5
10
2
4
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25擄C
Operating and Storage Temperature
75
0.6
Watt
W/
_
C
TJ, Tstg
鈥?65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
鈥?Junction to Case
鈥?Junction to Ambient
_
C/W
R
胃JC
R
胃JA
TL
1.65
62.5
260
Maximum Lead Temperature for Soldering Purposes:
1/8鈥?from case for 5 seconds
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
鈮?/div>
10%.
Designer鈥檚 and SWITCHMODE are trademarks of Motorola, Inc.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

BUL45D2 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 5A

  • 400V

  • 500mV @ 400mA，2A

  • 100µA

  • 10 @ 2A，1V

  • 75W

  • 13MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • BUL45D2OS

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