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BUL45F Datasheet

  • BUL45F

  • POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

  • 10頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45/D
Designer's
NPN Silicon Power Transistor
High Voltage SWITCHMODE
鈩?/div>
Data Sheet
BUL45 *
BUL45F*
*Motorola Preferred Device
t
Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
鈥?/div>
Improved Efficiency Due to:
鈥?Low Base Drive Requirements (High and Flat DC Current Gain hFE)
鈥?Low Power Losses (On鈥揝tate and Switching Operations)
鈥?Fast Switching: tfi = 100 ns (typ) and tsi = 3.2
碌s
(typ)
鈥?Fast Switching:
@ IC = 2.0 A, IB1 = IB2 = 0.4 A
鈥?/div>
Full Characterization at 125擄C
鈥?/div>
Tight Parametric Distributions Consistent Lot鈥搕o鈥揕ot
鈥?/div>
BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
鈥?Peak(1)
Base Current
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25擄C)
Total Device Dissipation
Derate above 25擄C
Operating and Storage Temperature
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25擄C)
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
VISOL
鈥?/div>
鈥?/div>
鈥?/div>
75
0.6
BUL45
400
700
9.0
5.0
10
2.0
4500
3500
1500
35
0.28
BUL45F
Unit
Vdc
Vdc
Vdc
Adc
Adc
Volts
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
BUL45
CASE 221A鈥?6
TO鈥?20AB
PD
TJ, Tstg
Watts
W/擄C
擄C
BUL45F
CASE 221D鈥?2
ISOLATED TO鈥?20 TYPE
UL RECOGNIZED
鈥?65 to 150
THERMAL CHARACTERISTICS
Rating
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
Symbol
R
胃JC
R
胃JA
MJE18006 MJF18006
1.65
62.5
3.55
62.5
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector鈥揈mitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125擄C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
鈮?/div>
10%.
(2) Proper strike and creepage distance must be provided.
Designer鈥檚 and SWITCHMODE are trademarks of Motorola, Inc.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
IEBO
400
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
10
100
100
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
碌A(chǔ)dc
(continued)
REV 2
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

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