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BUL146 Datasheet

  • BUL146

  • POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS

  • 10頁

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL146/D
鈩?/div>
Data Sheet
SWITCHMODE
鈩?/div>
Designer's
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146/BUL146F have an applications specific state鈥搊f鈥搕he鈥揳rt die designed
for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high voltage/high speed
transistors offer the following:
鈥?/div>
Improved Efficiency Due to Low Base Drive Requirements:
鈥?High and Flat DC Current Gain
鈥?Fast Switching
鈥?No Coil Required in Base Circuit for Turn鈥揙ff (No Current Tail)
鈥?/div>
Full Characterization at 125擄C
鈥?/div>
Parametric Distributions are Tight and Consistent Lot鈥搕o鈥揕ot
鈥?/div>
Two Package Choices: Standard TO鈥?20 or Isolated TO鈥?20
鈥?/div>
BUL146F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
鈥?Peak(1)
Base Current 鈥?Continuous
鈥?Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25擄C)
Total Device Dissipation
Derate above 25擄C
Operating and Storage Temperature
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25擄C)
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
BUL146
BUL146F
400
700
9.0
6.0
15
4.0
8.0
鈥?/div>
鈥?/div>
鈥?/div>
100
0.8
4500
3500
1500
40
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
BUL146*
BUL146F*
*Motorola Preferred Device
POWER TRANSISTOR
6.0 AMPERES
700 VOLTS
40 and 100 WATTS
BUL146
CASE 221A鈥?6
TO鈥?20AB
PD
TJ, Tstg
Watts
W/擄C
擄C
鈥?65 to 150
THERMAL CHARACTERISTICS
Rating
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8鈥?from Case for 5 Seconds
Symbol
R
胃JC
R
胃JA
TL
BUL44
1.25
62.5
260
BUL44F
3.125
62.5
Unit
擄C/W
擄C
BUL146F
CASE 221D鈥?2
ISOLATED TO鈥?20 TYPE
UL RECOGNIZED
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector鈥揈mitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125擄C)
Collector Cutoff Current
(VCE = 500 V, VEB = 0)
(TC = 125擄C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
鈮?/div>
10%.
(2) Proper strike and creepage distance must be provided.
Designer鈥檚 and SWITCHMODE are trademarks of Motorola, Inc.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
400
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
500
100
100
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
IEBO
碌A(chǔ)dc
(continued)
REV 1
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

BUL146 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • SWITCHMODE™

  • NPN

  • 6A

  • 400V

  • 700mV @ 600mA，3A

  • 100µA

  • 14 @ 500mA，5V

  • 100W

  • 14MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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