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BUK444-200B Datasheet

  • BUK444-200B

  • PowerMOS transistor

  • 80.85KB

  • 7頁(yè)

  • PHILIPS

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
BUK444
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-200A
200
5.3
25
0.4
MAX.
-200B
200
4.7
25
0.5
UNIT
V
A
W
鈩?/div>
PINNING - SOT186
PIN
1
2
3
gate
drain
source
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
鹵V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 k鈩?/div>
-
T
hs
= 25 藲C
T
hs
= 100 藲C
T
hs
= 25 藲C
T
hs
= 25 藲C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-200A
5.3
3.3
21
25
150
150
MAX.
200
200
30
-200B
4.7
3.0
19
UNIT
V
V
V
A
A
A
W
藲C
藲C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
-
TYP.
-
55
MAX.
5
-
UNIT
K/W
K/W
April 1993
1
Rev 1.100

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