High S.O.A. capability:
鈥?/div>
Low VCE(sat) = 2.0 V max. at IC = 4 A
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
High Voltage Silicon Power
Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
PD , POWER DISSIPATION (W)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current Continuous
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage Sust.
Power Transistor mainly intended for use as ignition circuit output transistor.
Characteristic
Rating
100
25
50
75
0
0
20
VCER(sus)
40
Figure 1. Power Derating
Symbol
Symbol
TJ, Tstg
60
120
80
100
TC, CASE TEMPERATURE (擄C)
VCBO
VEBO
VCER
胃
JC
PD
IC
IB
鈥?65 to 150
BU522B
Max.
1.67
75
0.60
475
450
425
2.0
7.0
5.0
Watts
W/
_
C
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
140
160
7 AMPERES
DARLINGTON
POWER TRANSISTORS
NPN SILICON
450 VOLTS
75 WATTS
BU522B
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BU522B/D
1