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BU4S11 Datasheet

  • BU4S11

  • Single 2-input NAND gate

  • 4頁

  • ROHM

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Standard ICs
Single 2-input NAND gate
BU4S11
The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the
BU4011B built into an SMP package.
鈥?/div>
Features dissipation.
1) Low current
2) Super-mini mold package designed for surface
mounting.
3) Wide range of operating power supply voltage.
4) Capable of driving two L-TTL inputs and one LS-TTL
input directly
鈥?/div>
Block diagram
V
DD
5
Y
4
1
A
2
B
3
V
SS
鈥?/div>
Absolute maximum ratings (Ta = 25擄C)
Parameter
Power supply voltage
Power dissipation
Input current
Operating temperature
Storage temperature
Input voltage
Symbol
V
DD
Pd
I
IN
Topr
Tstg
V
IN
Limits
V
SS
鈥?0.3 ~ V
SS +
18
170
鹵
10
鈥?40 ~ + 85
鈥?55 ~ + 150
V
SS
鈥?0.3 ~ V
DD +
0.3
Unit
V
mW
mA
擄C
擄C
V
Note 1: These values indicate the range limits of the voltage that can be applied to each pin without
destroying it. Operation cannot be guaranteed at these values.
Note 2: Power dissipation is reduced by 1.7mW for each increase in Ta of 1擄C each 25擄C.
鈥?/div>
Recommended operating conditions (Ta = 25擄C, V
Parameter
Power supply voltage
Input voltage
Symbol
V
DD
V
IN
Min.
3
0
鈥?/div>
鈥?/div>
SS
= 0 V)
Max.
16
V
DD
Unit
V
V
Typ.
1

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