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  • 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200...

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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
(1) Pulse Test: Pulse Width
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
NPN Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV鈥檚 and CRT鈥檚.
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 2
Forward Diode Voltage (IEC = 5 Adc) 鈥淒鈥?only
Base鈥揈mitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
Collector鈥揈mitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
Emitter Cutoff Current
(VEB = 6 Vdc, IC = 0)
Collector Cutoff Current
(VCE = Rated VCEV, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150
_
C)
Collector鈥揈mitter Sustaining Voltage(1)
(IC = 100 mAdc, IB = 0)
Lead Temperature for Soldering Purposes:
1/8鈥?from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage
Junction Temperature Range
Total Device Dissipation, TC = 25
_
C
Derate above TC = 25
_
C
Base Current
Collector Current 鈥?Continuous
Peak Repetitive
Peak (10 ms)
Emitter Base Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
High Voltage: VCEV = 330 or 400 V
Fast Switching Speed: tf = 750 ns (max)
Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
Packaged in Compact JEDEC TO鈥?20AB
Characteristic
Rating
v
300
碌s,
Duty Cycle
v
1%.
Characteristic
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCEV
PD
IC
IB
TL
Symbol
R
胃JC
R
胃JA
BU406
400
400
200
BU406, BU407
鈥?65 to 150
60
0.48
7
10
15
4
6
BU406
BU407
2.08
Max
275
70
BU407
330
330
150
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
IEBO
ICES
VEC
Watts
W/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
_
C
Min
200
150
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
7 AMPERES
NPN SILICON
POWER TRANSISTORS
60 WATTS
150 and 200 VOLTS
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
BU406
BU407
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BU406/D
Max
1.2
5
0.1
1
鈥?/div>
鈥?/div>
2
1
1
(continued)
mAdc
mAdc
Volts
Unit
Vdc
Vdc
Vdc
1

BU406 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 7A

  • 200V

  • 1V @ 500mA，5A

  • 5mA

  • -

  • 60W

  • 10MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • BU406OS

BU406相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC
  • 英文版
    SILICON NPN SWITCHING TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    NPN SILICON POWER TRANSISTORS
    ONSEMI
  • 英文版
    POWER TRANSISTORS(7A,150-200V,60W)
    MOSPEC
  • 英文版
    7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200...
    MOTOROLA
  • 英文版
    NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE ...
    WINGS
  • 英文版
    NPN SILICON POWER TRANSISTORS
    POINN
  • 英文版
    NPN POWER TRANSISTOR
    BOCA
  • 英文版
    High Voltage Switching
    FAIRCHILD
  • 英文版
    TRANS NPN 200V 7A TO-220
  • 英文版
    isc Silicon NPN Power Transistor
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE ...
    WINGS [ Wing S...
  • 英文版
    NPN SILICON POWER TRANSISTORS
    POINN [Pow...
  • 英文版
    NPN SILICON POWER TRANSISTORS
    ONSEMI [ON...
  • 英文版
    NPN POWER TRANSISTOR
    BOCA [Boca...
  • 英文版
    NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE ...
    WINGS [Win...
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC [ETC]
  • 英文版
    High Voltage Switching
    FAIRCHILD ...
  • 英文版
    POWER TRANSISTORS(7A,150-200V,60W)
    MOSPEC [Mo...

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