Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2730AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
9
3.5
MAX.
1700
825
16
40
125
5.0
-
4.5
UNIT
V
V
A
A
W
V
A
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 9 A; I
B
= 1.8 A
f = 32 kHz
I
Csat
= 9 A; f = 32 kHz
PINNING - SOT430
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
heat collector
sink
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1700
825
16
40
10
15
200
10
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
藲C
藲C
average over any 20 ms period
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
1
Turn-off current.
April 1997
1
Rev 1.000
1
2
3
4
