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BTW69N1200 Datasheet

  • BTW69N1200

  • SCR

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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BTW 69 (N)
SCR
.
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 69 Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTW 69 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180擄 conduction angle)
Average
on-state
current
(180擄
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25擄C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/碌s
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
BTW 69
BTW 69 N
BTW 69
BTW 69 N
Tc=70擄C
Tc=75擄C
Tc=70擄C
Tc=75擄C
tp=8.3 ms
tp=10 ms
I2t
dI/dt
Tstg
Tj
Tl
tp=10 ms
Value
50
55
32
35
525
500
1250
100
- 40 to + 150
- 40 to + 125
230
A2s
A/碌s
擄C
擄C
擄C
Unit
A
A
A
K
A
G
TOP 3
(Plastic)
Symbol
Parameter
BTW 69
200
400
400
BTW 69 / BTW 69 N
600
600
800
800
1000
1000
1200
1200
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
擄C
200
V
March 1995
1/5

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