Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT137S
(or BT137M)-
BT137S
(or BT137M)-
BT137S
(or BT137M)-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500F
500G
500
8
65
600
600F
600G
600
8
65
800
800F
800G
800
8
65
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT428
PIN
Standard Alternative
NUMBER
S
M
1
2
3
tab
MT1
MT2
gate
MT2
gate
MT2
MT1
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
鈮?/div>
102 藲C
full sine wave; T
j
= 25 藲C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/碌s
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/碌s
A/碌s
A/碌s
A/碌s
A
V
W
W
藲C
藲C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/碌s.
October 1997
1
Rev 1.200
1
2
3
4
5
6
