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BT131W-600 Datasheet

  • BT131W-600

  • Triacs logic level

  • 7頁(yè)

  • PHILIPS

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Philips Semiconductors
Product specification
Triacs
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs
in a plastic envelope suitable for
surface mounting, intended for use in
general
purpose
bidirectional
switching
and
phase
control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT131W series
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT131W-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
MAX. MAX. UNIT
500
500
1
10
600
600
1
10
V
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
4
SYMBOL
T2
main terminal 2
gate
main terminal 2
1
2
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
sp
鈮?/div>
108 藲C
full sine wave; T
j
= 25 藲C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/碌s
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
1
10
11
0.5
50
50
50
10
2
5
5
0.5
150
125
MAX.
-600
600
1
UNIT
V
A
A
A
A
2
s
A/碌s
A/碌s
A/碌s
A/碌s
A
V
W
W
藲C
藲C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/碌s.
July 1998
1
Rev 1.000

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