PDF預(yù)覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10
• 11
• 12

BSI

FEATURES

Ultra Low Power/Voltage CMOS SRAM

512K x 16 or 1M x 8 bit switchable

DESCRIPTION

BS616UV8021

鈥?Ultra low operation voltage : 1.8 ~ 2.3V

鈥?Ultra low power consumption :

Vcc = 2.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

鈥?High speed access time :

-70

70ns (Max.) at Vcc=2.0V

-10 100ns (Max.) at Vcc=2.0V

鈥?Automatic power down when chip is deselected

鈥?Three state outputs and TTL compatible

鈥?Fully static operation

鈥?Data retention supply voltage as low as 1.5V

鈥?Easy expansion with CE1, CE2 and OE options

鈥?I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616UV8021 is a high performance, ultra low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits or

1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 1.8V to 2.3V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.6uA and maximum access time of 70/100ns in 2.0V operation.

Easy memory expansion is provided by an active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

The BS616UV8021 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616UV8021 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

PRODUCT

FAMILY

BS616UV8021DC

BS616UV8021BC

BS616UV8021FC

BS616UV8021DI

BS616UV8021BI

BS616UV8021FI

OPERATING

TEMPERATURE

SPEED

(ns)

Vcc=2.0V

Vcc RANGE

POWER DISSIPATION

STANDBY

Operating

(I

CCSB1

, Max)

(I

CC

, Max)

PKG TYPE

Vcc=2.0V

Vcc=2.0V

+0 C to +70 C

O

O

O

O

1.8V ~ 2.3V

70 / 100

15uA

20mA

-40 C to +85 C

1.8V ~ 2.3V

70 / 100

20uA

25mA

DICE

BGA-48-0810

BGA-48-0912

DICE

BGA-48-0810

BGA-48-0912

PIN CONFIGURATIONS

1

A

B

C

D

E

F

G

H

LB

D8

D9

VSS

VCC

D14

D15

A18

2

OE

UB

D10

D11

D12

D13

CIO

.

A8

3

A0

A3

A5

A17

Vss

A14

A12

A9

4

A1

A4

A6

A7

A16

A15

A13

A10

5

A2

CE1

D1

D3

D4

D5

6

CE2

D0

D2

VCC

VSS

D6

BLOCK DIAGRAM

A15

A14

A13

A12

A11

A10

A9

A8

A17

A7

A6

Address

Input

Buffer

22

Row

Decoder

2048

Memory Array

2048 x 4096

4096

D0

16(8)

Data

Input

Buffer

16(8)

Column I/O

.

.

.

.

D15

CE1

CE2

WE

OE

UB

LB

CIO

Vdd

Vss

.

.

.

.

Write Driver

16(8)

Sense Amp

256(512)

Column Decoder

16(8)

Data

Output

Buffer

16(18)

Control

Address Input Buffer

WE

A11

D7

SAE

.

A16 A0 A1 A2 A3 A4 A5 A18 (SAE)

48-Ball CSP top View

Brilliance Semiconductor Inc

.

reserves the right to modify document contents without notice.

R0201-BS616UV8021

1

Revision 2.2

April 2001

next

BS616UV8021FI相關(guān)型號PDF文件下載

• 型號
  版本
  描述
  廠商
  下載
• BS616LV161
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI
  BS616LV161
• BS616LV161
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI [Brill...
  BS616LV161
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI
  BS616LV1010
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI [Brill...
  BS616LV1010
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI
  BS616LV1011
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI [Brill...
  BS616LV1011
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM
  BSI
  BS616LV1012
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM
  BSI [Brill...
  BS616LV1012
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI
  BS616LV1013
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI [Brill...
  BS616LV1013
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI
  BS616LV1015
• BS616LV101...
  英文版
  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
  BSI [Brill...
  BS616LV1015
• BS616LV161...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI
  BS616LV1611
• BS616LV161...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI [Brill...
  BS616LV1611
• BS616LV161...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI
  BS616LV1613
• BS616LV161...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI [Brill...
  BS616LV1613
• BS616LV161...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI
  BS616LV1615
• BS616LV161...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M X 16 bit
  BSI [Brill...
  BS616LV1615
• BS616LV162...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switc...
  BSI
  BS616LV1622
• BS616LV162...
  英文版
  Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switc...
  BSI [Brill...
  BS616LV1622

您可能感興趣的PDF文件資料

• BS616LV1011
• BS616LV1012
• BS616LV2016
• BS616LV4016EIP55
• BS616LV8017EC
• BS616LV1010AIG55
• BS616LV1010AI55
• BS616LV1010AI
• BS616LV1010AI
• BS616LV1010ACP70
• BS616LV1010ACP55
• BS616LV1010ACG55

熱門IC型號推薦

• BFG198
• BTS5434G
• BAW56WT1G
• BR93LC46FV-WE2
• BB153
• BH33FB1WG-TR
• BSC150N03LDG
• BD682
• BB148
• BD9893F-GE2
• BQ24013DRCR
• BTS247Z