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BSI

FEATURES

Ultra Low Power/Voltage CMOS SRAM

256K X 16 bit

DESCRIPTION

BS616UV4010

鈥?Ultra low operation voltage : 1.8 ~ 3.6V

鈥?Ultra low power consumption :

Vcc = 2.0V

C-grade: 15mA (Max.) operating current

I-grade: 20mA (Max.) operating current

0.20uA (Typ.) CMOS standby current

Vcc = 3.0V

C-grade: 20mA (Max.) operating current

I-grade: 25mA (Max.) operating current

0.25uA (Typ.) CMOS standby current

鈥?High speed access time :

-70

70ns (Max.) at Vcc = 2.0V

-10

100ns (Max.) at Vcc = 2.0V

鈥?Automatic power down when chip is deselected

鈥?Three state outputs and TTL compatible

鈥?Fully static operation

鈥?Data retention supply voltage as low as 1.5V

鈥?Easy expansion with CE and OE options

鈥?I/O Configuration x8/x16 selectable by LB and UB pin

The BS616UV4010 is a high performance, Ultra low power CMOS Static

Random Access Memory organized as 262,144 words by 16 bits and

operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.20uA and maximum access time of 70/100ns in 2.0V operation.

Easy memory expansion is provided by an active LOW chip

enable(CE) and active LOW output enable(OE) and three-state output

drivers.

The BS616UV4010 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616UV4010 is available in DICE form, JEDEC standard 44-pin

TSOP Type 2 package and 48-pin BGA package.

PRODUCT FAMILY

PRODUCT FAMILY

BS616UV4010DC

BS616UV4010EC

BS616UV4010BC

BS616UV4010DI

BS616UV4010EI

BS616UV4010BI

OPERATING

TEMPERATURE

Vcc

RANGE

SPEED

(

ns )

Vcc=2.0V

( I

CCSB1

, Max )

POWER DISSIPATION

Operating

STANDBY

( I

CC

, Max )

Vcc=

2.0V

Vcc=

3.0V

Vcc=

2.0V

Vcc=

3.0V

PKG

TYPE

DICE

TSOP2-44

BGA-48-0810

DICE

TSOP2-44

BGA-48-0810

+0 C to +70 C

O

O

1.8V ~ 3.6V

70 / 100

1uA

1.5uA

15mA

20mA

-40 C to +85 C

O

O

1.8V ~ 3.6V

70 / 100

2uA

3uA

20mA

25mA

PIN CONFIGURATIONS

A4

A3

A2

A1

A0

CE

DQ0

DQ1

DQ2

DQ3

VCC

GND

DQ4

DQ5

DQ6

DQ7

WE

A17

A16

A15

A14

A13

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A5

A6

A7

OE

UB

LB

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

NC

A8

A9

A10

A11

A12

BLOCK DIAGRAM

A4

A3

A2

A1

A0

A17

A16

A15

A14

A13

A12

Address

Input

Buffer

22

Row

Decoder

2048

Memory Array

2048 x 2048

BS616UV4010EC

BS616UV4010EI

2048

DQ0

16

Data

Input

Buffer

16

Column I/O

.

.

.

.

DQ15

.

.

.

.

Write Driver

Sense Amp

128

Column Decoder

16

Data

Output

16

Buffer

CE

WE

OE

UB

LB

Vcc

Gnd

Control

14

Address Input Buffer

A11 A10 A9 A8 A7 A6 A5

Brilliance Semiconductor Inc

.

reserves the right to modify document contents without notice.

R0201-BS616UV4010

1

Revision 2.4

April 2002

next

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