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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

1M x 16 or 2M x 8 bit switchable

BS616LV1622

鈥?Wide Vcc operation voltage : 2.4 ~ 5.5V

鈥?Very low power consumption :

Vcc = 3.0V C-grade: 45mA (@55ns) operating current

I -grade: 46mA (@55ns) operating current

C-grade: 36mA (@70ns) operating current

I -grade: 37mA (@70ns) operating current

3.0uA (Typ.)

CMOS standby current

Vcc = 5.0V C-grade: 113mA (@55ns) operating current

I -grade: 115mA (@55ns) operating current

C-grade: 90mA (@70ns) operating current

I -grade: 92mA (@70ns) operating current

15uA (Typ.)

CMOS standby current

鈥?High speed access time :

-55

55ns

-70

70ns

鈥?Automatic power down when chip is deselected

鈥?Three state outputs and TTL compatible

鈥?Fully static operation

鈥?Data retention supply voltage as low as 1.5V

鈥?Easy expansion with CE1, CE2 and OE options

鈥?I/O Configuration x8/x16 selectable by CIO, LB and UB pin

DESCRIPTION

The BS616LV1622 is a high performance, very low power CMOS Static

Random Access Memory organized as 1,048,676 words by 16 bits or

2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide

range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of

3.0uA

at 3V/25

o

C and maximum access time of 55ns at 3.0V/85

o

C .

This device provide three control inputs and three states output drivers

for easy memory expansion.

The BS616LV1622 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package.

PRODUCT FAMILY

PRODUCT FAMILY

OPERATING

TEMPERATURE

+0 C to +70 C

-40

O

C to +85

O

C

O

O

Vcc

RANGE

2.4V ~ 5.5V

2.4V ~ 5.5V

SPEED

(ns)

55ns : 3.0~5.5V

70ns : 2.7~5.5V

POWER DISSIPATION

STANDBY

Operating

(I

CCSB1

, Max)

(I

CC

, Max)

PKG TYPE

Vcc=3V

Vcc=5V

Vcc=3V

70ns

Vcc=5V

70ns

BS616LV1622TC

BS616LV1622TI

55 / 70

55 / 70

10uA

20uA

110uA

220uA

36mA

37mA

90mA

92mA

TSOP1-48

(12mmx20mm)

TSOP1-48

(12mmx20mm)

PIN CONFIGURATIONS

A4

A3

A2

A1

A0

/CE1

D0

D1

D2

D3

Vcc

CIO

Vss

D4

D5

D6

D7

A19

/WE

A18

A17

A16

A15

A14

1

48

47

46

A5

A6

A7

/OE

/UB

/LB

CE2

SAE

D15

D14

D13

D12

Vss

Vcc

D11

D10

D9

D8

A8

A9

A10

A11

A12

A13

BLOCK DIAGRAM

A19

A15

A14

A13

A12

A11

A10

A9

A8

A17

A7

A6

Address

Input

Buffer

24

Row

Decoder

4096

Memory Array

4096 x 4096

9

10

13

BS616LV1622TC

BS616LV1622T I

37

4096

D0

16(8)

Data

Input

Buffer

16(8)

Column I/O

16

17

.

.

.

.

D15

CE1

CE2

WE

OE

UB

.

.

.

.

Write Driver

16(8)

Sense Amp

256(512)

Column Decoder

16(8)

Data

Output

Buffer

27

24

25

16(18)

Control

Address Input Buffer

48-pin 12mmx20mm TSOP1 top view

LB

CIO

Vdd

Vss

A16 A0 A1 A2 A3 A4 A5 A18 (SAE)

Brilliance Semiconductor, Inc

. reserves the right to modify document contents without notice.

R0201-BS616LV1622

1

Revision 2.1

Jan.

2004

next

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