SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
BS250F
D
G
S
PARTMARKING DETAIL 聳 MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25擄C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-45
-90
-1.6
鹵
20
SOT23
UNIT
V
mA
A
V
mW
擄C
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
t
d(on)
t
r
t
d(off)
t
f
9
90
25
10
10
10
10
MIN. TYP. MAX. UNIT CONDITIONS.
-45
-1
-70
-3.5
-20
V
V
nA
I
D
=-100
碌
A, V
GS
=0V
I
D
=-1mA, V
DS
= V
GS
V
GS
=-15V, V
DS
=0V
V
DS
=-25V, V
GS
=0V
V
GS
=-10V,I
D
=-200mA
V
DS
=-10V,I
D
=-200mA
V
DS
=-10V, V
GS
=0V,
f=1MHz
-0.5.
碌
A
14
鈩?/div>
mS
pF
ns
ns
ns
ns
V
DD
鈮?/div>
-25V, I
D
=-200mA
(1) Measured under pulsed conditions. Width=300
碌
s. Duty cycle
鈮?/div>
2% (2) Sample test.
(3) Switching times measured with 50
鈩?/div>
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 55
1
2
3
