Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
telecommunications
equipment
against voltage transients.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
PARAMETER
Breakover voltage
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
Holding current
Non-repetitive peak pulse
current (CCITT K17)
MIN.
-
-
-
-
-
-
-
-
150
-
TYP.
140
160
180
200
220
240
260
280
-
-
MAX.
-
-
-
-
-
-
-
-
-
40
UNIT
V
V
V
V
V
V
V
V
mA
A
I
H
I
PP
OUTLINE - SOD106
date code
XXX denotes voltage grade
SYMBOL
YM
212
XXX
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
D
PARAMETER
Continuous voltage
CONDITIONS
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
5/310
碌s
impulse equivalent to
10/700
碌s,
1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
j
= 70 藲C prior to surge
t
p
= 10 ms
t
p
= 10
碌s
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 40
-
-
MAX.
105
120
135
150
165
180
195
210
40
15
1.1
50
4
50
150
150
260
UNIT
V
V
V
V
V
V
V
V
A
A
A
2
s
A/碌s
W
W
藲C
藲C
藲C
I
PP
I
TSM
I
2
t
dI
T
/dt
P
tot
P
TM
T
stg
T
j
T
L
Non-repetitive peak pulse
current
Non repetitive surge peak
on-state current
I
2
t for fusing
Rate of rise of on-state current
after V
(BO)
turn-on
Continuous dissipation on
T
sp
= 50藲C
infinite heatsink
Peak dissipation
t
p
= 1 ms; T
a
= 25藲C
Storage temperature
Operating junction temperature
Maximum terminal temperature soldering time = 10 s
for soldering
January 1997
PH
1
Rev 1.000
1
2
3
4
5
6
