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BR93LC46FJ-W Datasheet

  • BR93LC46FJ-W

  • 64】16bits serial EEPROM

  • 11頁(yè)

  • ROHM

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Memory ICs
BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /
BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W
64脳16bits serial EEPROM
BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /
BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W
The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed
electrically. Each is configured of 64 words
脳
16 bits (1,024 bits), and each word can be accessed individually and data
read from it and written to it. Operation control is performed using five types of commands.
The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write
operation, the internal status signal (READY or BUSY) can be output from the DO pin.
Applications
VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and
other battery-powered equipment requiring low voltage and low current
Features
1) 64 words
脳
16 bits EEPROM
2) Operating voltage range
When reading : 2.0 to 5.5V
When writing : 2.7 to 5.5V
3) Low current consumption
Operating (at 5V) : 3mA (Max.)
Standby (at 5V) : 5碌A(chǔ) (Max.)
4) Address can be incremented automatically during
read operations.
5) Auto erase and auto complete functions can be used
during write operations.
6) A write instruction inhibit function allows :
- write protection when power supply voltage is low.
- write disable state at power up.
- writing using command codes.
7) Compact packages
8) Display of READY / BUSY status
9) TTL-compatible input / output
10) Rewriting possible up to 100,000 times
11) Data can be stored for ten years without corruption.
Block diagram
Power supply
CS
Command decode
Control
Clock generation
SK
Write
disable
High voltage
generator
voltage detector
Address
Command
DI
register
buffer
6bits
Address
decoder
6bits
1,024bits
Data
16bits
register
DO
Dummy bits
R/W
amplifier
16bits
EEPROM array

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