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BQ4016YMC-70 Datasheet

  • BQ4016YMC-70

  • 1024Kx8 Nonvolatile SRAM

  • 11頁(yè)

  • TI

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bq4016/bq4016Y
1024Kx8 Nonvolatile SRAM
Features
廬
Data retention in the absence of
power
廬
Automatic write-protection
during power-up/power-down
cycles
廬
Conventional SRAM operation;
unlimited write cycles
廬
10-year minimum data retention
in absence of power
廬
Battery internally isolated until
power is applied
General Description
The CMOS bq4016 is a nonvolatile
8,388,608-bit static RAM organized
as 1,048,576 words by 8 bits. The in-
tegral control circuitry and lithium
energy source provide reliable non-
volatility coupled with the unlimited
write cycles of standard SRAM.
The control circuitry constantly
monitors the single 5V supply for an
out-of-tolerance condition. When V
CC
falls out of tolerance, the SRAM is
unconditionally write-protected to
prevent an inadver tent w rite
operation.
At this time the integral energy
source is switched on to sustain the
memory until after V
CC
returns
valid.
The bq4016 uses extremely low
standby current CMOS SRAMs,
coupled with a small lithium coin
cell to provide nonvolatility without
long write-cycle times and the write-
cycle limitations associated with
EEPROM.
The bq4016 has the same interface
as industry-standard SRAMs and re-
quires no external circuitry.
Pin Connections
Pin Names
A
0
鈥揂
19
DQ
0
鈥揇Q
7
CE
OE
WE
V
CC
V
SS
NC
Address inputs
Data input/output
Chip enable input
Output enable input
Write enable input
+5 volt supply input
Ground
No connect
Block Diagram
Selection Guide
Part
Number
bq4016MC -70
Sept. 1996 B
Maximum
Access
Time (ns)
70
Negative
Supply
Tolerance
-5%
Part
Number
bq4016YMC -70
Maximum
Access
Time (ns)
70
Negative
Supply
Tolerance
-10%
1

BQ4016YMC-70 產(chǎn)品屬性

  • 10

  • 集成電路 (IC)

  • 存儲(chǔ)器

  • -

  • RAM

  • NVSRAM（非易失 SRAM）

  • 8M（1M x 8）

  • 70ns

  • 并聯(lián)

  • 4.5 V ~ 5.5 V

  • 0°C ~ 70°C

  • 36-DIP 模塊（0.61"，15.49mm）

  • 36-DIP 模塊（18.42x52.96）

  • 托盤

  • 296-9403-5

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