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BQ4013LYMA-70N Datasheet

  • BQ4013LYMA-70N

  • 128 k X 8 NONVOLATILE SRAM (5 V, 3.3 V)

  • 15頁

  • TI

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bq4013/Y/LY
www.ti.com
SLUS121A 鈥?MAY 1999 鈥?REVISED MAY 2007
128 k
脳
8 NONVOLATILE SRAM (5 V, 3.3 V)
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Data Retention for at least 10 Years Without
Power
Automatic Write-Protection During
Power-up/Power-down Cycles
Conventional SRAM Operation, Including
Unlimited Write Cycles
Internal Isolation of Battery before Power
Application
5-V or 3.3-V Operation
Industry Standard 32-Pin DIP Pinout
GENERAL DESCRIPTION
The CMOS bq4013/Y/LY is a nonvolatile
1,048,576-bit static RAM organized as 131,072
words by 8 bits. The integral control circuitry and
lithium energy source provide reliable nonvolatility
coupled with the unlimited write cycles of standard
SRAM.
The control circuitry constantly monitors the single
supply for an out-of-tolerance condition. When V
CC
falls out of tolerance, the SRAM is unconditionally
write-protected to prevent an inadvertent write
operation.
At this time the integral energy source is switched on
to sustain the memory until after V
CC
returns valid.
The bq4013/Y/LY uses extremely low standby
current CMOS SRAMs, coupled with small lithium
coin cells to provide nonvolatility without long
write-cycle times and the write-cycle limitations
associated with EEPROM.
The bq4013/Y/LY requires no external circuitry and is
compatible with the industry-standard 1-Mb SRAM
pinout.
PIN CONNECTIONS
32鈭扨in DIP Module
(TOP VIEW)
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
NC
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright 漏 1999鈥?007, Texas Instruments Incorporated

BQ4013LYMA-70N 產(chǎn)品屬性

  • 12

  • 集成電路 (IC)

  • 存儲器

  • -

  • RAM

  • NVSRAM（非易失 SRAM）

  • 1M (128K x 8)

  • 70ns

  • 并聯(lián)

  • 3 V ~ 3.6 V

  • -40°C ~ 85°C

  • 32-DIP 模塊（0.61"，15.49mm）

  • 32-DIP 模塊（18.42x42.8）

  • 托盤

  • 296-22089-5

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