BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 01 鈥?12 February 2008
Preliminary data sheet
1. Product pro鏗乴e
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
擄
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[2]
[1]
[2]
[3]
f
(MHz)
3400 to 3600
V
DS
P
L(AV)
(V)
28
(W)
9
P
L(M)[1]
G
p
(W)
70
14
畏
D
23
ACPR
885k
ACPR
1980k
(dBc)
鈭?4
[3]
鈭?9
[3]
(dB) (%) (dBc)
P
L(M)
stands for peak output power.
Single carrier N-CDMA with pilot, paging, sync and 6 traf鏗乧 channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traf鏗乧 channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V, an I
Dq
of 450 mA, a power gain of 14 dB, a
drain ef鏗乧iency of 23 % and a peak output power of 70 W:
I
Quali鏗乪d up to a maximum V
DS
operation of 32 V
I
Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
I
Integrated ESD protection
I
Excellent ruggedness
I
High ef鏗乧iency
I
Excellent thermal stability
I
Designed for broadband operation
I
Internally matched for ease of use
I
Low gold plating thickness on leads