BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Rev. 02 鈥?7 February 2008
Preliminary data sheet
1. Product pro鏗乴e
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
擄
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
2500 to 2700
V
DS
(V)
28
P
L(AV)
(W)
7
G
p
(dB)
18
畏
D
(%)
24
ACPR
885k
(dBc)
鈭?9
[2]
ACPR
1980k
(dBc)
鈭?4
[2]
Single carrier N-CDMA with pilot, paging sync and 6 traf鏗乧 channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traf鏗乧 channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I
Dq
of 350 mA:
I
Quali鏗乪d up to a maximum V
DS
operation of 32 V
I
Integrated ESD protection
I
Excellent ruggedness
I
High ef鏗乧iency
I
Excellent thermal stability
I
Designed for broadband operation
I
Internally matched for ease of use
I
Low gold plating thickness on leads
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)