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BLF4G10-120 Datasheet

  • BLF4G10-120

  • UHF power LDMOS transistor

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BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 鈥?10 January 2006
Product data sheet
1. Product pro鏗乴e
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1:
Typical performance
RF performance at T
h
= 25
擄
C in a common base class-AB test circuit.
Mode of
operation
CW
2-tone
[1]
[2]
f
(MHz)
V
DS
(V)
P
L
(W)
120
48 (AV)
G
p
(dB)
(typ)
19
19
畏
D
(%)
57
40
46
ACPR
400
ACPR
600
EVM
rms
IMD3
(dBc)
(dBc)
(dBc)
(%)
(typ)
(typ)
(typ)
-
鈭?1
[1]
-
-
鈭?2
[2]
-
-
1.5
-
-
-
鈭?1
861 to 961 28
861 to 961 28
GSM EDGE 861 to 961 28
120 (PEP) 19
ACPR
400
at 30 kHz resolution bandwidth
ACPR
600
at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an I
Dq
of 850 mA:
x
Load power = 48 W (AV)
x
Gain = 19 dB (typ)
x
Ef鏗乧iency = 40 % (typ)
x
ACPR
400
=
鈭?1
dBc (typ)
x
ACPR
600
=
鈭?2
dBc (typ)
x
EVM
rms
= 1.5 % (typ)
s
Easy power control
s
Excellent ruggedness
s
High ef鏗乧iency
s
Excellent thermal stability
s
Designed for broadband operation (800 MHz to 1000 MHz)
s
Internally matched for ease of use

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