BDX63
BDX63A
BDX63B
BDX63C
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
16.9
10.9
12.8
TO3 Package.
Case connected to collector.
PNP complements are:
BDX62, BDX62A, BDX62B, BDX62C.
ABSOLUTE MAXIMUM RATINGS
(Tcase=25擄C unless otherwise stated)
BDX BDX BDX BDX
63 63A 63B 63C
60
80 100 120
80
5
矛
茂
茂
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stj
R
th j-mb
Semelab plc.
Collector - emitter voltage (open base)
Collector - base voltage (open emitter)
Emitter - base voltage (open collector)
Collector current
Collector current (peak)
Base current
Total power dissipation at T
case
= 25擄C
Maximum junction temperature
Storage junction temperature
Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
V
V
A
A
mA
W
擄C
擄C
100
5
茂
茂
120
5
8
12
鉚
茂
茂
140
5
茂
茂
卯
150
90
200
-65 to 200
1.94
擄C / W
Prelim. 7/93
1
2
