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BDX53B Datasheet

  • BDX53B

  • Plastic Medium-Power Complementary Silicon Transistors

  • 6頁

  • MOTOROLA   MOTOROLA

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上傳產(chǎn)品規(guī)格書

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鈥?/div>
High DC Current Gain 鈥?/div>
hFE = 2500 (Typ) @ IC = 4.0 Adc
鈥?/div>
Collector Emitter Sustaining Voltage 鈥?@ 100 mAdc
VCEO(sus) = 80 Vdc (Min) 鈥?BDX53B, 54B
VCEO(sus)
= 100 Vdc (Min) 鈥?BDX53C, 54C
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat)
= 4.0 Vdc (Max) @ IC = 5.0 Adc
鈥?/div>
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
鈥?/div>
TO鈥?20AB Compact Package
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current 鈥?Continuous
Peak
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
TA TC
4.0 80
Symbol
TJ, Tstg
VCEO
VCB
VEB
IC
IB
PD
Symbol
R
胃JC
R
胃JA
BDX53B
BDX54B
80
80
鈥?65 to + 150
60
0.48
0.2
8.0
12
5.0
Max
70
70
BDX53C
BDX54C
100
100
Watts
W/
_
C
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
. . . designed for general鈥損urpose amplifier and low鈥搒peed switching applications.
Plastic Medium-Power
Complementary Silicon
Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
PD, POWER DISSIPATION (WATTS)
1.0
2.0
3.0
20
40
60
0
0
20
40
Figure 1. Power Derating
TA
T, TEMPERATURE (擄C)
60
TC
80
100
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
120
140
160
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 鈥?100 VOLTS
65 WATTS
BDX54C
BDX54B
BDX53C
BDX53B
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BDX53B/D
NPN
PNP
1

BDX53B 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN - 達林頓

  • 8A

  • 80V

  • 2V @ 12mA，3A

  • 500µA

  • 750 @ 3A，3V

  • 65W

  • -

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

BDX53B相關型號PDF文件下載

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