BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
Copyright 漏 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDT60, BDT60A, BDT60B and BDT60C
50 W at 25擄C Case Temperature
4 A Continuous Collector Current
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
BDT61
Collector-base voltage (I
E
= 0)
BDT61A
BDT61B
BDT61C
BDT61
Collector-emitter voltage (I
B
= 0)
BDT61A
BDT61B
BDT61C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25擄C case temperature (see Note 1)
Continuous device dissipation at (or below) 25擄C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150擄C case temperature at the rate of 0.4 W/擄C.
2. Derate linearly to 150擄C free air temperature at the rate of 16 mW/擄C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
60
80
100
120
60
80
100
120
5
4
0.1
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
擄C
擄C
擄C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1
2
3
4
5
6
