MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistors
Order this document
by BDB02C/D
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BDB02C,D
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
BDB02C
鈥?0
鈥?0
鈥?.0
鈥?.5
1.0
8.0
2.5
20
鈥?55 to +150
BDB02D
鈥?00
鈥?00
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/擄C
Watt
mW/擄C
擄C
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Voltage
(IC = 鈥?0 mA, IB = 0)
Collector Cutoff Current
(VCB = 鈥?0 V, IE = 0)
(VCB = 鈥?00 V, IE = 0)
Emitter Cutoff Current (IC = 0, VEB = 鈥?.0 V)
BDB02C
BDB02D
BDB02C
BDB02D
IEBO
V(BR)CEO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
鈥?.1
鈥?00
nAdc
鈥?0
鈥?00
鈥?/div>
鈥?/div>
Vdc
m
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 鈥?00 mA, VCE = 鈥?.0 V)
(IC = 鈥?00 mA, VCE = 鈥?.0 V)
Collector 鈥?Emitter Saturation Voltage(1) (IC = 鈥?000 mA, IB = 鈥?00 mA)
Collector 鈥?Emitter On Voltage(1) (IC = 鈥?000 mA, VCE = 鈥?.0 V)
hFE
40
25
VCE(sat)
VBE(on)
鈥?/div>
鈥?/div>
400
鈥?/div>
鈥?.7
鈥?.2
Vdc
Vdc
鈥?/div>
DYNAMIC CHARACTERISTICS
Current鈥揋ain 鈥?Bandwidth Product (IC = 鈥?00 mA, VCE = 鈥?.0 V, f = 20 MHz)
Output Capacitance (VCB = 鈥?0 V, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
fT
Cob
50
鈥?/div>
鈥?/div>
30
MHz
pF
v
300
m
s, Duty Cycle 2.0%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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