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BD802 Datasheet

  • BD802

  • Plastic High Power Silicon PNP Transistor

  • 4頁

  • MOTOROLA   MOTOROLA

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鈥?/div>
DC Current Gain 鈥?hFE = 40 (Min) @ IC = 1.0 Adc
鈥?/div>
BD802 is complementary with BD 795, 797, 799, 801
* Pulse Test: Pulse Width
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
complementary circuits.
Plastic High Power Silicon
PNP Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Current鈥揋ain 鈥?Bandwidth Product
(IC = 0.25 Adc, VCE = 10 Vdc,
f = MHz)
Base鈥揈mitter On Voltage*
(IC = 3.0 Adc, VCE = 2.0 Vdc)
Collector鈥揈mitter Saturation Voltage*
(IC = 3.0 Adc, IB = 0.3 Adc)
DC Current Gain
(IC = 1.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
Collector鈥揈mitter Sustaining Voltage*
(IC = 0.05 Adc, IB = 0)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
x
300
碌s,
Duty Cycle
x
2.0.
Characteristic
Symbol
TJ, Tstg
Symbol
VCBO
VCEO
VEBO
PD
胃
JC
IC
IB
鈥?55 to + 150
Value
65
522
100
100
3.0
8.0
5.0
1.92
Max
VCE(sat)
VBE(on)
Symbol
BVCEO
ICBO
IEBO
hFE
fT
Watts
mW/
_
C
Unit
_
C/W
Adc
Adc
Vdc
Vdc
Vdc
Unit
_
C
Min
100
3.0
30
15
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
8 AMPERE
POWER TRANSISTORS
PNP SILICON
100 VOLTS
65 WATTS
BD802
Max
CASE 221A鈥?6
TO鈥?20AB
1.6
1.0
1.0
0.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Order this document
by BD802/D
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1

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