BD676A/678A/680A/682
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
鈥?Medium Power Darlington TR
鈥?Complement to BD675A, BD677A, BD679A and BD681 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD676A
: BD678A
: BD680A
: BD682
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-4
-6
- 100
14
88
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
擄C/W
擄C
擄C
V
CEO
Collector-Emitter Voltage : BD676A
: BD678A
: BD680A
: BD682
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
R
胃ja
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
Collector-Base Voltage
: BD676A
: BD678A
: BD680A
: BD682
Test Condition
I
C
= - 50mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
-2
750
750
- 2.8
- 2.5
- 2.5
- 2.5
V
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
Typ.
Max.
Units
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, V
BE
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
I
C
= - 2A, I
B
= - 40mA
I
C
= - 1.5A, I
B
= - 30mA
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
I
CEO
Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
Emitter Cut-off Current
* DC Current Gain
: BD676A/678A/680A
: BD682
I
EBO
h
FE
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682
* Base-Emitter On Voltage : BD676A/678A/680A
: BD682
V
BE
(on)
* Pulse Test: PW=300碌s, duty Cycle=1.5% Pulse
漏2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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