BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
Copyright 漏 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD546 Series
85 W at 25擄C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
15 A Continuous Collector Current
Customer-Specified Selections Available
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
BD545
Collector-base voltage (I
E
= 0)
BD545A
BD545B
BD545C
BD545
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD545A
BD545B
BD545C
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25擄C case temperature (see Note 2)
Continuous device dissipation at (or below) 25擄C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150擄C case temperature at the rate of 0.68 W/擄C.
3. Derate linearly to 150擄C free air temperature at the rate of 28 mW/擄C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
40
60
80
100
5
15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
擄C
擄C
擄C
擄C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1
2
3
4
5
6
