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BD533/535/537

BD533/535/537

Medium Power Linear and Switching

Applications

鈥?Low Saturation Voltage

鈥?Complement to BD534, BD536 and BD538 respectively

1

TO-220

2.Collector

3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Parameter

Collector-Base Voltage

: BD533

: BD535

: BD537

: BD533

: BD535

: BD537

: BD533

: BD535

: BD537

1.Base

Value

45

60

80

45

60

80

45

60

80

5

8

1

50

150

- 65 ~ 150

Units

V

V

V

V

V

V

V

V

V

V

A

A

W

擄C

擄C

V

CES

Collector-Emitter Voltage

V

CEO

Collector-Emitter Voltage

V

EBO

I

C

I

B

P

C

T

J

T

STG

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

I

CBO

Parameter

Collector Cut-off Current : BD533

: BD535

: BD537

Collector Cut-off Current : BD533

: BD535

: BD537

Emitter Cut-off Current

* DC Current Gain

: BD533/535

: BD537

: ALL DEVICE

: BD533/535

: BD537

: ALL DEVICE

: ALL DEVICE

Test Condition

V

CB

= 45V, I

E

= 0

V

CB

= 60V, I

E

= 0

V

CB

= 80V, I

E

= 0

V

CE

= 45V, V

BE

= 0

V

CE

= 60V, V

BE

= 0

V

CE

= 80V, V

BE

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 5V, I

C

= 10mA

V

CE

= 2V, I

C

= 500mA

V

CE

= 2V, I

C

= 2A

20

15

40

25

15

30

15

40

20

0.8

1.5

3

12

75

100

0.8

V

V

V

MHz

Min.

Typ.

Max.

100

100

100

100

100

100

1

Units

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

mA

I

CES

I

EBO

h

FE

h

FE

h

FE

Groups

J

K

V

CE

= 2V, I

C

= 2A

V

CE

= 2V, I

C

= 3A

V

CE

= 2V, I

C

= 2A

V

CE

= 2V, I

C

= 3A

I

C

= 2A, I

B

= 0.2A

I

C

= 6A, I

B

= 0.6A

V

CE

= 2V, I

C

= 2A

V

CE

= 1V, I

C

= 500mA

V

CE

(sat)

V

BE

(on)

f

T

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

Current Gain Bandwidth Product

* Pulse Test: PW =300碌s, duty Cycle =1.5% Pulsed

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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