BD440/442
BD440/442
Medium Power Linear and Switching
Applications
鈥?Complement to BD439, BD441 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD440
: BD442
V
CES
Collector-Emitter Voltage
: BD440
: BD442
Collector-Emitter Voltage
: BD440
: BD442
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 60
- 80
- 60
- 80
- 60
- 80
-5
-4
-7
-1
36
150
- 65 ~ 1 50
Units
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD440
: BD442
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
Test Condition
I
C
= - 100mA, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 5V, I
C
= - 10mA
V
CE
= -1 V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 250mA
3
-0.58
- 1.5
20
15
40
40
25
15
140
140
140
140
Min.
-60
-80
- 100
- 100
- 100
- 100
-1
Typ.
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
- 0.8
V
V
V
MHz
* Pulse Test: PW=300碌s, duty Cycle=1.5% Pulsed
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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