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BD245C Datasheet

  • BD245C

  • NPN SILICON POWER TRANSISTORS

  • 94.69KB

  • 6頁

  • POINN

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BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
Copyright 漏 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD246 Series
80 W at 25擄C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
q
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
C
2
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
BD245
Collector-emitter voltage (R
BE
= 100
鈩?
BD245A
BD245B
BD245C
BD245
Collector-emitter voltage (I
C
= 30 mA)
BD245A
BD245B
BD245C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25擄C case temperature (see Note 2)
Continuous device dissipation at (or below) 25擄C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
錕?frac12;LI
C
T
j
T
stg
T
L
2
SYMBOL
VALUE
55
70
90
115
45
60
80
100
5
10
15
3
80
3
62.5
-65 to +150
-65 to +150
250
UNIT
V
CER
V
V
CEO
V
V
A
A
A
W
W
mJ
擄C
擄C
擄C
This value applies for t
p
鈮?/div>
0.3 ms, duty cycle
鈮?/div>
10%.
Derate linearly to 150擄C case temperature at the rate of 0.64 W/擄C.
Derate linearly to 150擄C free air temperature at the rate of 24 mW/擄C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
鈩?
V
BE(off)
= 0, R
S
= 0.1
鈩?
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BD245C 產(chǎn)品屬性

  • Bourns

  • Transistors Bipolar (BJT)

  • NPN

  • 100 V

  • 5 V

  • 10 A

  • 40

  • + 150 C

  • SMD/SMT

  • SOT-93

  • - 65 C

  • 80000 mW

  • 30

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