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BD243/A/B/C

BD243/A/B/C

Medium Power Linear and Switching

Applications

鈥?Complement to BD244, BD244A, BD244B and BD244C respectively

1

TO-220

2.Collector

3.Emitter

1.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Collector-Base Voltage

: BD243

: BD243A

: BD243B

: BD243C

V

CEO

Collector-Emitter Voltage

: BD243

: BD243A

: BD243B

: BD243C

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

45

60

80

100

45

60

80

100

5

6

10

2

65

150

- 65 ~ 150

V

V

V

V

V

V

V

V

V

A

A

A

W

擄C

擄C

Parameter

Value

Units

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

Parameter

* Collector-Emitter Sustaining Voltage

: BD243

: BD243A

: BD243B

: BD243C

Collector Cut-off Current

Collector Cut-off Current

: BD243/243A

: BD243B/243C

: BD243

: BD243A

: BD243B

: BD243C

Test Condition

I

C

=30mA, I

B

=0

Min.

45

60

80

100

0.7

0.7

0.4

0.4

0.4

0.4

1

30

15

1.5

2

V

V

Typ.

Max.

Units

V

V

V

V

mA

mA

mA

mA

mA

mA

mA

I

CEO

I

CES

V

CE

= 30V, I

B

= 0

V

CE

= 60V, I

B

= 0

V

CE

= 45V, V

BE

= 0

V

CE

= 60V, V

BE

= 0

V

CE

= 80V, V

BE

= 0

V

CE

= 100V, V

BE

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 4V, I

C

= 0.3A

V

CE

= 4V, I

C

= 3A

I

C

= 6A, I

B

= 1A

V

CE

= 4V, I

C

= 6A

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

Emitter Cut-off Current

*DC Current Gain

*Collector-Emitter Saturation Voltage

*Base-Emitter ON Voltage

* Pulse Test :PW=300碌s, duty Cycle<20% Pulsed

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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