鈥?/div>
Compact TO鈥?20 AB Package
. . . designed for use in general purpose amplifier and switching applications.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current 鈥?Continuous
Peak
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
80
Symbol
TJ, Tstg
VCEO
VCB
VEB
PD
IC
IB
Symbol
R
胃JC
BD243B
BD244B
80
80
鈥?65 to + 150
65
0.52
2.0
5.0
6
10
1.92
Max
BD243C
BD244C
100
100
Watts
W/
_
C
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
Complementary Silicon Plastic
Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
PD, POWER DISSIPATION (WATTS)
20
40
60
0
0
20
40
Figure 1. Power Derating
60
80
100
120
TC, CASE TEMPERATURE (擄C)
_
C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Unit
_
C
140
160
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 鈥?100 VOLTS
65 WATTS
BD243B
BD243C*
PNP
BD244B
BD244C*
*Motorola Preferred Device
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BD243B/D
NPN
1