鈥?/div>
Compact TO鈥?20 AB Package
. . . designed for use in general purpose amplifier and switching applications.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current 鈥?Continuous
Peak
Emitter鈥揃ase Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
40
Symbol
TJ, Tstg
VCEO
VCES
VEB
PD
IC
IB
Symbol
R
胃JC
R
胃JA
BD241B
BD242B
90
80
鈥?65 to + 150
40
0.32
1.0
3.0
5.0
5.0
3.125
62.5
Max
BD241C
BD242C
100
115
Watts
W/
_
C
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
Complementary Silicon Plastic
Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
PD, POWER DISSIPATION (WATTS)
10
20
30
0
0
20
40
Figure 1. Power Derating
TC, CASE TEMPERATURE (擄C)
60
80
100
120
_
C/W
_
C/W
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
Unit
_
C
140
160
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
BD241B
BD241C*
PNP
BD242B
BD242C*
*Motorola Preferred Device
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BD241B/D
NPN
1