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BD239/A/B/C

BD239/A/B/C

Medium Power Linear and Switching

Applications

鈥?Complement to BD240/A/B/C respectively

1

TO-220

2.Collector

3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

Parameter

Collector-Emitter Voltage

: BD239

: BD239A

: BD239B

: BD239C

Collector-Emitter Voltage

: BD239

: BD239A

: BD239B

: BD239C

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

1.Base

Value

45

60

80

100

55

70

90

115

5

2

4

0.6

30

150

- 65 ~ 150

Units

V

V

V

V

V

V

V

V

V

A

A

A

W

擄C

擄C

V

CER

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

Parameter

*Collector-Emitter Sustaining Voltage

: BD239

: BD239A

: BD239B

: BD239C

Collector Cut-off Current

: BD239/A

: BD239B/C

I

CES

Collector Cut-off Current

: BD239

: BD239A

: BD239B

: BD239C

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

Emitter Cut-off Current

*DC Current Gain

*Collector-Emitter Saturation Voltage

*Base-Emitter ON Voltage

V

CE

= 45V, V

BE

= 0

V

CE

= 60V, V

BE

= 0

V

CE

= 80V, V

BE

= 0

V

CE

= 100V, V

BE

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 4V, I

C

= 0.2A

V

CE

= 4V, I

C

= 1A

I

C

= 1A, I

B

= 0.2A

V

CE

= 4V, I

C

= 1A

40

15

0.7

1.3

V

V

0.2

0.2

0.2

0.2

1

mA

mA

mA

mA

mA

V

CE

= 30V, I

B

= 0

V

CE

= 60V, I

B

= 0

0.3

0.3

mA

mA

Test Condition

I

C

= 30mA, I

B

= 0

Min.

45

60

80

100

Typ.

Max.

Units

V

V

V

V

I

CEO

* Pulse Test: PW=350碌s, duty Cycle鈮?.0% Pulsed

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

next

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