BD239/A/B/C
BD239/A/B/C
Medium Power Linear and Switching
Applications
鈥?Complement to BD240/A/B/C respectively
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
Parameter
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
1.Base
Value
45
60
80
100
55
70
90
115
5
2
4
0.6
30
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
V
CER
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD239
: BD239A
: BD239B
: BD239C
Collector Cut-off Current
: BD239/A
: BD239B/C
I
CES
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.2A
V
CE
= 4V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 4V, I
C
= 1A
40
15
0.7
1.3
V
V
0.2
0.2
0.2
0.2
1
mA
mA
mA
mA
mA
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
mA
mA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
45
60
80
100
Typ.
Max.
Units
V
V
V
V
I
CEO
* Pulse Test: PW=350碌s, duty Cycle鈮?.0% Pulsed
漏2000 Fairchild Semiconductor International
Rev. A, February 2000