BD233/235/237
BD233/235/237
Medium Power Linear and Switching
Applications
鈥?Complement to BD 234/236/238 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD233
: BD235
: BD237
: BD233
: BD235
: BD237
: BD233
: BD235
: BD237
Value
45
60
100
45
60
80
45
60
100
5
2
6
25
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
擄C
擄C
V
CEO
Collector-Emitter Voltage
V
CER
Collector-Emitter Voltage
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD233
: BD235
: BD237
Collector Cut-off Current
: BD233
: BD235
: BD237
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 0.1A
V
CE
= 2V, I
C
= 1A
V
CE
= 10V, I
C
= 250mA
3
40
25
0.6
1.3
V
V
MHz
100
100
100
1
碌A
碌A
碌A
mA
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
Typ.
Max.
Units
V
V
V
I
CBO
* Pulse Test: PW=300碌s, duty Cycle=1.5% Pulsed
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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